 |  |  | |
| PartNumber | KSE181STU | KSE182PWD | KSE180S |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | TRANSISTOR NPN 80V DIP | TRANS NPN 40V 3A TO-126 |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-126-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 50 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 250 | - | - |
| Height | 11 mm | - | - |
| Length | 8 mm | - | - |
| Packaging | Tube | - | - |
| Width | 3.25 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 3 A | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 60 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.026843 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSE181STU | Bipolar Transistors - BJT NPN Epitaxial Sil | |
| KSE182STU | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
ON Semiconductor |
KSE181STU | TRANS NPN 60V 3A TO-126 | |
| KSE182PWD | TRANSISTOR NPN 80V DIP | ||
| KSE180S | TRANS NPN 40V 3A TO-126 | ||
| KSE182STU | TRANS NPN 80V 3A TO-126 | ||
| KSE180 | 신규 및 오리지널 | ||
| KSE182 | 신규 및 오리지널 |