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| PartNumber | MAGX-000912-250L00 | MAGX-000912-125L00 | MAGX-000912-500L00 |
| Description | RF JFET Transistors 960-1215MHz 50Volt 250W Pk Gain 18.7dB | RF JFET Transistors 960-1215MHz 50Volt 125W Pk Gain 18.9dB | RF JFET Transistors 960-1215MHz GaN Sic 128 uS pulse Flanged |
| Manufacturer | - | MACOM | - |
| Product Category | - | Transistors - FETs, MOSFETs - Single | - |
| Packaging | - | Tray | - |
| Mounting Style | - | SMD/SMT | - |
| Operating Temperature Range | - | - 40 C to + 95 C | - |
| Package Case | - | Flange Ceramic-2 | - |
| Technology | - | GaN SiC | - |
| Configuration | - | Common Source | - |
| Transistor Type | - | HEMT | - |
| Gain | - | 19.2 dB | - |
| Output Power | - | 125 W | - |
| Pd Power Dissipation | - | 230 W | - |
| Maximum Operating Temperature | - | + 95 C | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Operating Frequency | - | 0.96 GHz to 1.2 GHz | - |
| Id Continuous Drain Current | - | 4 A | - |
| Vds Drain Source Breakdown Voltage | - | 175 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 3.8 V | - |
| Transistor Polarity | - | N-Channel | - |
| Forward Transconductance Min | - | 2.5 S | - |
| Vgs Gate Source Breakdown Voltage | - | - 8 V | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
MACOM |
MAGX-000912-650L0S | RF JFET Transistors 960-1215MHz 650W Pk 50Volt 128us Pulse | |
| MAGX-000912-SB1PPR | EVAL BOARD FOR MAGX-000912-250L0 | ||
| MAGX-000912-SB0PPR | EVAL BOARD FOR MAGX-000912-125L0 | ||
| MAGX-000912-250L00 | RF JFET Transistors 960-1215MHz 50Volt 250W Pk Gain 18.7dB | ||
| MAGX-000912-125L00 | RF JFET Transistors 960-1215MHz 50Volt 125W Pk Gain 18.9dB | ||
| MAGX-000912-500L0S | RF JFET Transistors 960-1215MHz GaN Sic 128uS pls Flangeless | ||
| MAGX-000912-500L00 | RF JFET Transistors 960-1215MHz GaN Sic 128 uS pulse Flanged | ||
| MAGX-000912-250L | 신규 및 오리지널 | ||
| MAGX-000912-650L | 신규 및 오리지널 | ||
| MAGX-000912-650L00 | RF JFET Transistors 960-1215MHz 650W Pk 50Volt 128us Pulse |