| PartNumber | MAGX-002731-100L00 | MAGX-002731-180L00 | MAGX-003135-120L00 |
| Description | RF JFET Transistors 2.7-3.1GHz 50Volt 100W Pk Gain 12dB | RF JFET Transistors 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB | RF JFET Transistors 3.1-3.5GHz 50Volt 120W Pk Gain 11.5dB |
| Manufacturer | MACOM | MACOM | MACOM |
| Product Category | RF JFET Transistors | RF JFET Transistors | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN SiC | GaN SiC | GaN SiC |
| Gain | 12.6 dB | 11.5 dB | 11.8 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 175 V | 175 V | - |
| Vgs Gate Source Breakdown Voltage | - 8 V | - 8 V | - |
| Id Continuous Drain Current | 7.1 A | 10 A | - |
| Output Power | 100 W | 180 W | 120 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 95 C | + 95 C | + 95 C |
| Pd Power Dissipation | 128 W | 192 W | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Packaging | Tray | Tray | Bulk |
| Configuration | Common Source | Common Source | Common Source |
| Operating Frequency | 2.7 GHz to 3.1 GHz | 2.7 GHz to 3.1 GHz | 3.1 GHz to 3.5 GHz |
| Operating Temperature Range | - 40 C to + 95 C | - 40 C to + 95 C | - 40 C to + 95 C |
| Product | RF JFET | RF JFET | - |
| Type | GaN SiC HEMT | GaN SiC HEMT | - |
| Brand | MACOM | MACOM | - |
| Forward Transconductance Min | 2.5 S | 5 S | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | Transistors | Transistors | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - 3 V | - |
| Package Case | - | - | Flange Ceramic-2 |
| Pd Power Dissipation | - | - | 170 W |
| Id Continuous Drain Current | - | - | 6.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 175 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 3 V |
| Forward Transconductance Min | - | - | 3.3 S |
| Vgs Gate Source Breakdown Voltage | - | - | - 8 V |