MBC139

MBC13900NT1 vs MBC13900 vs MBC13900T1 , BGD804N

 
PartNumberMBC13900NT1MBC13900MBC13900T1 , BGD804N
DescriptionRF Bipolar Transistors DISCRETE BJT PB FREE
ManufacturerNXP--
Product CategoryRF Bipolar Transistors--
RoHSY--
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min100 at 5 mA at 2 V--
Collector Emitter Voltage VCEO Max6.5 V--
Emitter Base Voltage VEBO3 V--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSOT-343--
Collector Base Voltage VCBO8 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandNXP / Freescale--
Gain Bandwidth Product fT15000 MHz--
Maximum DC Collector Current0.02 A--
Product TypeRF Bipolar Transistors--
SubcategoryTransistors--
제조사 부분 # 설명 RFQ
NXP / Freescale
NXP / Freescale
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NXP Semiconductors
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MBC13917EPR2 IC AMP GP 100MHZ-2.5GHZ 6MLPD EP
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