| PartNumber | MBT3906DW1T1G | MBT3906DW1T2G | MBT3906DW1T1 |
| Description | Bipolar Transistors - BJT SS GP XSTR PNP 40V | Bipolar Transistors - BJT Dual PNP Bipolar Transistor | Bipolar Transistors - BJT 200mA 40V Dual PNP |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | N |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 | SC-70-6 |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | - 40 V | - 40 V | - 40 V |
| Collector Base Voltage VCBO | - 40 V | - 40 V | - 40 V |
| Emitter Base Voltage VEBO | 5 V | - 5 V | 5 V |
| Collector Emitter Saturation Voltage | - 0.4 V | - 0.4 V | - 0.4 V |
| Maximum DC Collector Current | 0.2 A | - | 0.2 A |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | 250 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MBT3906DW1 | MBT3906DW1 | - |
| Height | 1 mm | - | 0.9 mm |
| Length | 2.2 mm | - | 2 mm |
| Packaging | Reel | Reel | Reel |
| Width | 1.35 mm | - | 1.25 mm |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Continuous Collector Current | - 200 mAdc | - 200 mA | - 0.2 A |
| DC Collector/Base Gain hfe Min | 60 | - | 60 |
| Pd Power Dissipation | 150 mW | 150 mW | 150 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | MBT3906DW1T2G | MBT3906DW1T1G | - |
| Unit Weight | 0.000212 oz | 0.000265 oz | 0.000988 oz |
| Technology | - | Si | - |
| DC Current Gain hFE Max | - | 300 | - |