MJD122G

MJD122G vs MJD122G (J122G) vs MJD122G(DPAK)

 
PartNumberMJD122GMJD122G (J122G)MJD122G(DPAK)
DescriptionDarlington Transistors 8A 100V Bipolar Power NPN
ManufacturerON Semiconductor--
Product CategoryDarlington Transistors--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max100 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO100 V--
Maximum DC Collector Current8 A--
Maximum Collector Cut off Current10 uA--
Pd Power Dissipation20 W--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3 (DPAK)--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD122--
PackagingTube--
DC Current Gain hFE Max12000--
Height2.38 mm--
Length6.73 mm--
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current8 A--
DC Collector/Base Gain hfe Min1000--
Product TypeDarlington Transistors--
Factory Pack Quantity75--
SubcategoryTransistors--
Unit Weight0.017637 oz--
제조사 부분 # 설명 RFQ
MJD122G Darlington Transistors 8A 100V Bipolar Power NPN
MJD122G (J122G) 신규 및 오리지널
MJD122G(DPAK) 신규 및 오리지널
MJD122G,J122G 신규 및 오리지널
MJD122G/127G 신규 및 오리지널
MJD122G/MJD127G 신규 및 오리지널
ON Semiconductor
ON Semiconductor
MJD122G Darlington Transistors 8A 100V Bipolar Power NPN
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