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| PartNumber | MJE182G | MJE182STU |
| Description | Bipolar Transistors - BJT 3A 80V 12.5W NPN | Bipolar Transistors - BJT NPN Epitaxial Sil |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-225-3 | TO-126-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 80 V | 80 V |
| Collector Base Voltage VCBO | 100 V | 100 V |
| Emitter Base Voltage VEBO | 7 V | 7 V |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V |
| Maximum DC Collector Current | 3 A | 3 A |
| Gain Bandwidth Product fT | 50 MHz | 50 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | MJE182 | MJE182 |
| Height | 11.04 mm | 11 mm |
| Length | 7.74 mm | 8 mm |
| Packaging | Bulk | Tube |
| Width | 2.66 mm | 3.25 mm |
| Brand | ON Semiconductor | ON Semiconductor / Fairchild |
| Continuous Collector Current | 3 A | 3 A |
| DC Collector/Base Gain hfe Min | 50 | 50 |
| Pd Power Dissipation | 1.5 W | 12.5 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 500 | 1920 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.023986 oz | 0.026843 oz |
| DC Current Gain hFE Max | - | 250 |
| Part # Aliases | - | MJE182STU_NL |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor |
MJE182G | Bipolar Transistors - BJT 3A 80V 12.5W NPN | |
| MJE182STU | TRANS NPN 80V 3A TO-126 | ||
| MJE182G | Bipolar Transistors - BJT 3A 80V 12.5W NPN | ||
ON Semiconductor / Fairchild |
MJE182STU | Bipolar Transistors - BJT NPN Epitaxial Sil | |
| MJE182G , MMBFJ304 | 신규 및 오리지널 | ||
| MJE182G,MJE182 | 신규 및 오리지널 | ||
| MJE182G-TR | 신규 및 오리지널 | ||
| MJE182G. | BIP C77 NPN 3A 80V ROHS COMPLIANT: YES | ||
| MJE182G/MJE172 | 신규 및 오리지널 | ||
| MJE182STU PB | 신규 및 오리지널 | ||
| MJE1909 | 신규 및 오리지널 |