MJW21191

MJW21191 vs MJW21191G vs MJW21191G.

 
PartNumberMJW21191MJW21191GMJW21191G.
DescriptionBipolar Transistors - BJT 8A 150V 100W PNPTRANS PNP 150V 8A TO-247
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSN--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max150 V--
Collector Base Voltage VCBO150 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage2 V--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT40 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height21.08 mm (Max)--
Length16.26 mm (Max)--
PackagingTube--
Width5.3 mm (Max)--
BrandON Semiconductor--
Continuous Collector Current8 A--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation125 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity30--
SubcategoryTransistors--
Unit Weight1.340411 oz--
제조사 부분 # 설명 RFQ
ON Semiconductor
ON Semiconductor
MJW21191 Bipolar Transistors - BJT 8A 150V 100W PNP
MJW21191 TRANS PNP 150V 8A TO-247
MJW21191G TRANS PNP 150V 8A TO-247
MJW21191G. 신규 및 오리지널
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