MMBT3904WT1

MMBT3904WT1G vs MMBT3904WT1/MMBT3904 vs MMBT3904WT1G LFP

 
PartNumberMMBT3904WT1GMMBT3904WT1/MMBT3904MMBT3904WT1G LFP
DescriptionBipolar Transistors - BJT 200mA 60V NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.3 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT3904W--
Height0.85 mm--
Length2.1 mm--
PackagingReel--
Width1.24 mm--
BrandON Semiconductor--
Continuous Collector Current0.2 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000219 oz--
제조사 부분 # 설명 RFQ
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ON Semiconductor
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MMBT3904WT1 TRANS NPN 40V 0.2A SOT323
MMBT3904WT1G Bipolar Transistors - BJT 200mA 60V NPN
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