 |  | | |
| PartNumber | MMBT5962 | MMBT5962-NL | MMBT5962LT1G |
| Description | Bipolar Transistors - BJT NPN Transistor General Purpose | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 45 V | - | - |
| Emitter Base Voltage VEBO | 8 V | - | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MMBT5962 | - | - |
| DC Current Gain hFE Max | 1400 | - | - |
| Height | 0.93 mm | - | - |
| Length | 2.92 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| DC Collector/Base Gain hfe Min | 600 | - | - |
| Pd Power Dissipation | 350 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
MMBT5962 | Bipolar Transistors - BJT NPN Transistor General Purpose | |
| MMBT5962-NL | 신규 및 오리지널 | ||
| MMBT5962LT1G | 신규 및 오리지널 | ||
ON Semiconductor |
MMBT5962 | TRANS NPN 45V 0.1A SOT-23 |