MMST3906-7

MMST3906-7-F vs MMST3906-7 vs MMST3906-7-F(K5N

 
PartNumberMMST3906-7-FMMST3906-7MMST3906-7-F(K5N
DescriptionBipolar Transistors - BJT -40V 200mWBipolar Transistors - BJT -40V 200mW
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 40 V- 40 V-
Collector Base Voltage VCBO- 40 V- 40 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 0.3 V- 0.3 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMST39MMST3906-
DC Current Gain hFE Max300300-
Height1 mm1 mm-
Length2.2 mm2.2 mm-
PackagingReelReel-
Width1.35 mm1.35 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 0.2 A- 0.2 A-
Pd Power Dissipation200 mW200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000176 oz0.000176 oz-
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated
MMST3906-7-F Bipolar Transistors - BJT -40V 200mW
MMST3906-7 Bipolar Transistors - BJT -40V 200mW
MMST3906-7-F(K5N 신규 및 오리지널
MMST3906-7-F-79 신규 및 오리지널
MMST3906-7 Bipolar Transistors - BJT -40V 200mW
MMST3906-7-F Bipolar Transistors - BJT -40V 200mW
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