PartNumber | MRF101AN | MRF101AN-230MHZ | MRF101AN-27MHZ |
Description | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V | MRF100AN REFERENCE BRD - 233MHZ | MRF100AN REFERENCE BOARD - 27MHZ |
Manufacturer | NXP | - | - |
Product Category | RF MOSFET Transistors | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Id Continuous Drain Current | 8.8 A | - | - |
Vds Drain Source Breakdown Voltage | 133 V | - | - |
Gain | 21.1 dB | - | - |
Output Power | 100 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Packaging | Tube | - | - |
Operating Frequency | 1.8 MHz to 250 MHz | - | - |
Series | MRF101 | - | - |
Type | RF Power MOSFET | - | - |
Brand | NXP Semiconductors | - | - |
Forward Transconductance Min | 7.1 S | - | - |
Number of Channels | 1 Channel | - | - |
Pd Power Dissipation | 182 W | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 250 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 6 V, + 10 V | - | - |
Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
Part # Aliases | 935377233129 | - | - |