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| PartNumber | MRF6S21100NBR1 | MRF6S21100HR5 | MRF6S21140HR3 |
| Description | RF MOSFET Transistors 2170MHZ 23W | RF MOSFET Transistors HV6 23W W-CDMA | RF MOSFET Transistors HV6 LDMOS 30W NI880H |
| Manufacturer | NXP | NXP | NXP |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
| RoHS | E | - | Y |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Technology | Si | Si | Si |
| Vds Drain Source Breakdown Voltage | 68 V | 68 V | 68 V |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-272-4 | NI-780 | NI-880 |
| Packaging | Reel | Reel | Reel |
| Configuration | Single Dual Drain Dual Gate | Single | Single |
| Height | 2.64 mm | 4.32 mm | 5.08 mm |
| Length | 23.67 mm | 34.16 mm | 34.16 mm |
| Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
| Width | 9.07 mm | 9.91 mm | 13.8 mm |
| Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Moisture Sensitive | Yes | - | - |
| Pd Power Dissipation | 307 W | - | 50 W |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
| Factory Pack Quantity | 500 | 50 | 250 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Vgs Gate Source Voltage | - 0.5 V, 12 V | - 0.5 V, 12 V | - 0.5 V, 12 V |
| Unit Weight | 0.067412 oz | 0.227150 oz | 0.343346 oz |
| Series | - | - | MRF6S21140H |