 |  | |
| PartNumber | MS1001 | MS1001MFES |
| Description | RF Bipolar Transistors RF Transistor | |
| Manufacturer | Advanced Semiconductor, Inc. | - |
| Product Category | RF Bipolar Transistors | - |
| RoHS | Y | - |
| Transistor Type | Bipolar Power | - |
| Technology | Si | - |
| Transistor Polarity | NPN | - |
| DC Collector/Base Gain hfe Min | 20 | - |
| Collector Emitter Voltage VCEO Max | 18 V | - |
| Emitter Base Voltage VEBO | 4 V | - |
| Continuous Collector Current | 20 A | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Configuration | Single | - |
| Mounting Style | Screw Mount | - |
| Package / Case | M174 | - |
| Packaging | Tray | - |
| Operating Frequency | 30 MHz | - |
| Type | RF Bipolar Power | - |
| Brand | Advanced Semiconductor, Inc. | - |
| Pd Power Dissipation | 270 W | - |
| Product Type | RF Bipolar Transistors | - |
| Subcategory | Transistors | - |
