NDS351N

NDS351N vs NDS351N , MAX6348UR36 vs NDS351N / 351

 
PartNumberNDS351NNDS351N , MAX6348UR36NDS351N / 351
DescriptionMOSFET NChannel Logic Level Enhancement Mode FET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current1.1 A--
Rds On Drain Source Resistance250 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.12 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesNDS351N--
Transistor Type1 N-Channel--
Width1.4 mm--
BrandON Semiconductor / Fairchild--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.001058 oz--
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
NDS351N MOSFET NChannel Logic Level Enhancement Mode FET
ON Semiconductor
ON Semiconductor
NDS351N MOSFET N-CH 30V 1.1A SSOT3
NDS351N , MAX6348UR36 신규 및 오리지널
NDS351N / 351 신규 및 오리지널
NDS351N(R4F-2) 신규 및 오리지널
NDS351N-NL 신규 및 오리지널
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