 |  | | |
| PartNumber | NE651R479A-T1-A | NE651R479A-T1 | NE651R479A-T1(NE651R479 |
| Description | RF JFET Transistors L&S Band GaAs HJFET | ||
| Manufacturer | CEL | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HFET | - | - |
| Technology | GaAs | - | - |
| Gain | 12 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 8 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 4 V | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Output Power | 30 dBm | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | 79A | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 1.9 GHz | - | - |
| Product | RF JFET | - | - |
| Type | GaAs HFET | - | - |
| Brand | CEL | - | - |
| P1dB Compression Point | 27 dBm | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
CEL |
NE651R479A-T1-A | RF JFET Transistors L&S Band GaAs HJFET | |
| NE651R479A-T1-A | FET RF 8V 1.9GHZ 79A | ||
| NE651R479A-T1 | 신규 및 오리지널 | ||
| NE651R479A-T1(NE651R479 | 신규 및 오리지널 |