NE6801

NE68019-A vs NE68018-T1-A vs NE68018-A

 
PartNumberNE68019-ANE68018-T1-ANE68018-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High Frequency
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RFTransistors - Bipolar (BJT) - RF
RoHSY--
Transistor TypeBipolarNPNNPN
TechnologySiSiSi
Transistor PolarityNPNNPNNPN
Collector Emitter Voltage VCEO Max10 V--
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current0.035 A0.035 A0.035 A
ConfigurationSingleSingleSingle
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23--
Operating Frequency3 GHz--
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation100 mW (1/10 W)--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Series---
Packaging-Tape & Reel (TR) Alternate PackagingBulk Alternate Packaging
Part Aliases-2SC5013-T1-A-
Package Case-SC-82A, SOT-343SC-82A, SOT-343
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-343SOT-343
Power Max-150mW150mW
Current Collector Ic Max-35mA35mA
Voltage Collector Emitter Breakdown Max-10V10V
DC Current Gain hFE Min Ic Vce-50 @ 10mA, 6V50 @ 10mA, 6V
Frequency Transition-10GHz10GHz
Noise Figure dB Typ f-1.8dB @ 2GHz1.8dB @ 2GHz
Gain-10.2dB10.2dB
Pd Power Dissipation-150 mW150 mW
제조사 부분 # 설명 RFQ
CEL
CEL
NE68019-T1-A RF Bipolar Transistors NPN High Frequency
NE68019-A RF Bipolar Transistors NPN High Frequency
NE68018-T1-A RF Bipolar Transistors NPN High Frequency
NE68019-T1-A RF Bipolar Transistors NPN High Frequency
NE68018-A RF Bipolar Transistors NPN High Frequency
NE68019-A RF Bipolar Transistors NPN High Frequency
NE68019 RF Bipolar Transistors NPN High Frequency
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