NE856

NE85639-T1-A vs NE85639R-T1-A vs NE85639-T1-R27-A

 
PartNumberNE85639-T1-ANE85639R-T1-ANE85639-T1-R27-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF TRANS NPN 12V 9GHZ SOT143
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF
RoHSYY-
Transistor TypeBipolarBipolarNPN
TechnologySiSi-
Transistor PolarityNPNNPN-
Collector Emitter Voltage VCEO Max12 V--
Emitter Base Voltage VEBO3 V--
Continuous Collector Current0.1 A0.1 A-
ConfigurationSingleSingle-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseMiniMold-4SOT-143R-
PackagingReelReel*
Height1.1 mm--
Length2.9 mm--
TypeRF Bipolar Small SignalRF Bipolar Small Signal-
Width1.5 mm--
BrandCELCEL-
Pd Power Dissipation200 mW (1/5 W)200 mW (1/5 W)-
Product TypeRF Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # Aliases2SC4093-T1-A--
Series---
Package Case--*
Mounting Type--*
Supplier Device Package--*
Power Max--200mW
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--12V
DC Current Gain hFE Min Ic Vce--50 @ 20mA, 10V
Frequency Transition--9GHz
Noise Figure dB Typ f--1.1dB @ 1GHz
Gain--13dB
제조사 부분 # 설명 RFQ
CEL
CEL
NE856M03-A RF Bipolar Transistors NPN Lo-Noise Hi-Gain
NE85639-T1-A RF Bipolar Transistors NPN High Frequency
NE85639R-T1-A RF Bipolar Transistors NPN High Frequency
NE85639-T1-R27-A RF TRANS NPN 12V 9GHZ SOT143
NE856M02-AZ RF Bipolar Transistors NPN Low Distort Amp
NE85639-T1-A RF Bipolar Transistors NPN High Frequency
NE856M02-T1-AZ RF Bipolar Transistors NPN Low Distort Amp
NE85639R-T1-A RF TRANS NPN 12V 9GHZ SOT143R
NE856M13 RF Bipolar Transistors NPN Lo-Noise Hi-Gain
NE85639-T1-R27 신규 및 오리지널
NE85639/39R 신규 및 오리지널
NE85639E 신규 및 오리지널
NE85639E-T1 신규 및 오리지널
NE85639R-T1-27R 신규 및 오리지널
NE856M02-T1-A 신규 및 오리지널
NE856M02-T1-AZ/RF 신규 및 오리지널
NE85639R RF Bipolar Transistors NPN High Frequency
NE856M02 RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
NE856M02-T1 신규 및 오리지널
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