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| PartNumber | NE85633-T1B-R24-A | NE85633-T1B-R25-A | NE85633-T1B-R25 |
| Description | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN High Frequency | NPN 200MW 12V 100MA 7GHZ |
| Manufacturer | CEL | CEL | NEC |
| Product Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF | RF Transistors (BJT) |
| Series | - | - | - |
| Packaging | Tape & Reel (TR) | Digi-ReelR Alternate Packaging | - |
| Unit Weight | 0.007090 oz | 0.007090 oz | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | - |
| Technology | Si | Si | - |
| Mounting Type | Surface Mount | Surface Mount | - |
| Supplier Device Package | SOT-23 | SOT-23 | - |
| Configuration | Single | Single | - |
| Power Max | 200mW | 200mW | - |
| Transistor Type | NPN | NPN | - |
| Current Collector Ic Max | 100mA | 100mA | - |
| Voltage Collector Emitter Breakdown Max | 12V | 12V | - |
| DC Current Gain hFE Min Ic Vce | 80 @ 20mA, 10V | 125 @ 20mA, 10V | - |
| Frequency Transition | 7GHz | 7GHz | - |
| Noise Figure dB Typ f | 1.1dB @ 1GHz | 1.1dB @ 1GHz | - |
| Gain | 11.5dB | 11.5dB | - |
| Pd Power Dissipation | 0.2 W | 0.2 W | - |
| Transistor Polarity | NPN | NPN | - |
| Continuous Collector Current | 0.1 A | 0.1 A | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Operating Frequency | - | 1 GHz | - |
| Collector Emitter Voltage VCEO Max | - | 12 V | - |
| Emitter Base Voltage VEBO | - | 3 V | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
CEL |
NE85633-T1B-R24-A | RF Bipolar Transistors NPN High Frequency | |
| NE85633-T1B-R25-A | RF Bipolar Transistors NPN High Frequency | ||
| NE85633-T1B-R25 | NPN 200MW 12V 100MA 7GHZ |