NESG203

NESG2030M04-T2-A vs NESG2030M04-A vs NESG2031M05-EVNF58

 
PartNumberNESG2030M04-T2-ANESG2030M04-ANESG2031M05-EVNF58
DescriptionRF Bipolar Transistors NPN SiGe High FreqRF SMALL SIGNAL TRANSISTOR BIPOLAR/HBTRF Bipolar Transistors For NESF2031M05-A Noise Fig at 5.8 GHz
ManufacturerCEL-CEL
Product CategoryRF Bipolar Transistors-RF Evaluation and Development Kits, Boards
RoHSY--
Transistor TypeBipolar--
TechnologySiGe--
Transistor PolarityNPN--
Emitter Base Voltage VEBO1.2 V--
Continuous Collector Current0.035 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSOT-343--
PackagingReel--
Collector Base Voltage VCBO8 V--
DC Current Gain hFE Max200 at 5 mA at 2 V--
Operating Frequency60000 MHz--
TypeRF Silicon Germanium-Transistor
BrandCEL--
Pd Power Dissipation80 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
For Use With Related Products--[email protected]
Series---
Frequency--20GHz ~ 25GHz
Supplied Contents--Board
제조사 부분 # 설명 RFQ
CEL
CEL
NESG2030M04-T2-A RF Bipolar Transistors NPN SiGe High Freq
NESG2030M04-A RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
NESG2031M05-EVNF58 RF Bipolar Transistors For NESF2031M05-A Noise Fig at 5.8 GHz
NESG2030M04-T2-A RF TRANS NPN 2.3V 60GHZ M04
NESG2031M05-A RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
NESG2030M04 RF Bipolar Transistors NPN SiGe High Freq
NESG2030M04-T1 신규 및 오리지널
NESG2030M04-T1-A 신규 및 오리지널
NESG2030M04-T2 신규 및 오리지널
NESG2031M05 RF Bipolar Transistors NPN SiGe High Freq
NESG2031M05-T1 신규 및 오리지널
NESG2031M05-T1-A 신규 및 오리지널
NESG2031M05-T1-A , EM632 신규 및 오리지널
NESG2031M16 RF Bipolar Transistors
NESG2031M16-T1-A 신규 및 오리지널
NESG2031M16-T3 신규 및 오리지널
NESG2031M16-T3 SOT563 신규 및 오리지널
Top