NGTG3

NGTG30N60FWG vs NGTG30N60FLWG vs NGTG30N60FLNG

 
PartNumberNGTG30N60FWGNGTG30N60FLWGNGTG30N60FLNG
DescriptionIGBT Transistors 600V/30A IGBT NPT TO-247IGBT Transistors 600V/30A IGBT LPT TO-247
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.45 V1.65 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation167 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesNGTG30N60FWGNGTG30N60FLWG-
PackagingTubeTube-
BrandON Semiconductor--
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight0.229281 oz0.229281 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247-
Power Max-250W-
Reverse Recovery Time trr---
Current Collector Ic Max-60A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-120A-
Vce on Max Vge Ic-1.9V @ 15V, 30A-
Switching Energy-700μJ (on), 280μJ (off)-
Gate Charge-170nC-
Td on off 25°C-83ns/170ns-
Test Condition-400V, 30A, 10 Ohm, 15V-
Pd Power Dissipation-250 W-
Collector Emitter Voltage VCEO Max-600 V-
제조사 부분 # 설명 RFQ
NGTG35N65FL2WG IGBT Transistors 650V/35A FAST IGBT FSII T
NGTG30N60FLNG 신규 및 오리지널
ON Semiconductor
ON Semiconductor
NGTG30N60FWG IGBT Transistors 600V/30A IGBT NPT TO-247
NGTG30N60FLWG IGBT Transistors 600V/30A IGBT LPT TO-247
NGTG30N60FWG IGBT Transistors 600V/30A IGBT NPT TO-247
NGTG35N65FL2WG IGBT 650V 60A 167W TO247
Top