 |  | | |
| PartNumber | NJG1127HB6 | NJG1127HB6 TE1 | NJG1127HB6(TE1) |
| Description | RF Amplifier 800MHz Band LNA GaAs MMIC | ||
| Manufacturer | NJR | - | - |
| Product Category | RF Amplifier | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | USB-8-B6 | - | - |
| Type | Low Noise Amplifier | - | - |
| Technology | GaAs | - | - |
| Operating Frequency | 800 MHz | - | - |
| P1dB Compression Point | 9 dBm | - | - |
| Gain | 15 dB | - | - |
| Operating Supply Voltage | 2.8 V | - | - |
| NF Noise Figure | 2.5 dB | - | - |
| Test Frequency | 880 MHz | - | - |
| Operating Supply Current | 16 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Series | NJG1127 | - | - |
| Packaging | Tube | - | - |
| Brand | NJR | - | - |
| Number of Channels | 1 Channel | - | - |
| Pd Power Dissipation | 160 mW | - | - |
| Product Type | RF Amplifier | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Wireless & RF Integrated Circuits | - | - |
| Supply Voltage Max | 2.95 V | - | - |
| Supply Voltage Min | 2.65 V | - | - |
| Tradename | NJG112 | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
NJR (New Japan Radio) |
NJG1127HB6-TE1 | RF Amplifier 800 MHz Band LNA | |
| NJG1127HB6 | RF Amplifier 800MHz Band LNA GaAs MMIC | ||
| NJG1127HB6 TE1 | 신규 및 오리지널 | ||
| NJG1127HB6(TE1) | 신규 및 오리지널 | ||
| NJG1127HB6(TE1) , SMDJ11 | 신규 및 오리지널 | ||
| NJG1127HB6-TE1_PBFREE | 신규 및 오리지널 | ||
| NJG1127HB6TE1 | 신규 및 오리지널 | ||
| NJG1127HB6 | RF Amplifier 800MHz Band LNA GaAs MMIC | ||
| NJG1127HB6-TE1 | RF Amplifier 800 MHz Band LNA |