NJW3281

NJW3281G vs NJW3281 vs NJW3281AG

 
PartNumberNJW3281GNJW3281NJW3281AG
DescriptionBipolar Transistors - BJT 200 W BETA AUDIO
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3P-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max250 V--
Collector Base Voltage VCBO250 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.4 V--
Maximum DC Collector Current15 A15 A-
Gain Bandwidth Product fT30 MHz30 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesNJW1302NJW1302-
DC Current Gain hFE Max7575-
Height18.7 mm--
Length15.6 mm--
PackagingTubeTube-
Width4.8 mm--
BrandON Semiconductor--
Continuous Collector Current15 ADC--
DC Collector/Base Gain hfe Min75--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity30--
SubcategoryTransistors--
Unit Weight0.238311 oz0.238311 oz-
Package Case-TO-3P-
Pd Power Dissipation-200000 mW-
Collector Emitter Voltage VCEO Max-250 V-
Collector Base Voltage VCBO-250 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-75-
제조사 부분 # 설명 RFQ
NJW3281G Bipolar Transistors - BJT 200 W BETA AUDIO
NJW3281 신규 및 오리지널
NJW3281AG 신규 및 오리지널
NJW3281G/JW1302G 신규 및 오리지널
NJW3281G/NJW1302G 신규 및 오리지널
ON Semiconductor
ON Semiconductor
NJW3281G Bipolar Transistors - BJT 200 W BETA AUDIO
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