NSBA123E stock, NSBA123E, NSBA123EDXV6T1G


PartNumber	NSBA123EDXV6T1G	NSBA123EF3T5G	NSBA123EDXV6T1
Description	Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP	Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B	Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
RoHS	Y	Y	N
Configuration	Dual	-	Dual
Transistor Polarity	PNP	-	PNP
Typical Input Resistor	2.2 kOhms	-	2.2 kOhms
Typical Resistor Ratio	1	-	1
Mounting Style	SMD/SMT	-	SMD/SMT
Package / Case	SOT-563-6	-	SOT-563-6
DC Collector/Base Gain hfe Min	8	-	8
Collector Emitter Voltage VCEO Max	50 V	-	50 V
Continuous Collector Current	- 0.1 A	-	- 0.1 A
Peak DC Collector Current	100 mA	-	100 mA
Pd Power Dissipation	357 mW	-	357 mW
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Series	NSBA123EDXV6	NSBA123EF3	-
Packaging	Reel	Reel	Reel
DC Current Gain hFE Max	8	-	8
Height	0.55 mm	-	0.55 mm
Length	1.6 mm	-	1.6 mm
Width	1.2 mm	-	1.2 mm
Brand	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Type	BJTs - Bipolar Transistors - Pre-Biased	BJTs - Bipolar Transistors - Pre-Biased	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	4000	8000	-
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.000106 oz	-	0.000106 oz

Search Part Number : "NSBA123E", Match & Start with "NSBA123E" - Total : 6

제조사	부분 #	설명
	NSBA123EDXV6T1G	Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
	NSBA123EF3T5G	Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
ON Semiconductor	NSBA123EDXV6T1	Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
	NSBA123EDXV6T1	TRANS 2PNP PREBIAS 0.5W SOT563
	NSBA123EDXV6T1G	TRANS 2PNP PREBIAS 0.5W SOT563
	NSBA123EF3T5G	Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B

NSBA123E