 |  | ||
| PartNumber | NSTB60BDW1T1G | NSTB60BDW1T1 | NSTJD1155LT1G |
| Description | Bipolar Transistors - Pre-Biased SS GP XSTR NPN | TRANS NPN PREBIAS/PNP SOT363 | IGBT Transistors MOSFET NFET 8V 1.3A 175MOHM |
| Manufacturer | ON Semiconductor | - | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | - | FETs - Arrays |
| RoHS | Y | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 22 kOhms | - | - |
| Typical Resistor Ratio | 2.13 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | - 150 mA | - | - |
| Peak DC Collector Current | 150 mA | - | - |
| Pd Power Dissipation | 256 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSTB60 | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 80 | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Package Case | - | - | - |
| Operating Temperature | - | - | - |
| Mounting Type | - | - | - |
| Supplier Device Package | - | - | - |
| FET Type | - | - | - |
| Power Max | - | - | - |
| Drain to Source Voltage Vdss | - | - | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | - | - |
| Current Continuous Drain Id 25°C | - | - | - |
| Rds On Max Id Vgs | - | - | - |
| Vgs th Max Id | - | - | - |
| Gate Charge Qg Vgs | - | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor |
NSTB60BDW1T1G | Bipolar Transistors - Pre-Biased SS GP XSTR NPN | |
| NSTR4501NT1G | MOSFET NFET 20V 3.2A 80MOH | ||
| NSTB60BDW1T1 | TRANS NPN PREBIAS/PNP SOT363 | ||
| NSTR4501NT1G | MOSFET N-CH 20V 3.2A SOT23-3 | ||
| NSTB60BDW1T1G | Bipolar Transistors - Pre-Biased SS GP XSTR NPN | ||
| NSTJD1155LT1G | IGBT Transistors MOSFET NFET 8V 1.3A 175MOHM | ||
| NSTL272M500V64X139F | CAP LDD64X1392700F500VDC - Boxed Product (Development Kits) (Alt: NSTL272M500V64X139F) | ||
| NSTL332M500V64X149F | CAP LDD64X1493300F500VDC - Boxed Product (Development Kits) (Alt: NSTL332M500V64X149F) | ||
| NSTH-25 | Slot Nut, for HD (heavy duty) linear actuators, sz 25 | ||
| NSTB60ADW1T1G | 신규 및 오리지널 | ||
| NSTBVA2.5/2-G-5.08 | 신규 및 오리지널 | ||
| NSTL103M350V90X141P2F | 신규 및 오리지널 | ||
| NSTL152M450V51X118P2F | 신규 및 오리지널 | ||
| NSTLW472M400V77X121P | 신규 및 오리지널 | ||
| NSTM515AS | INSTOCK | ||
| NSTRL | 신규 및 오리지널 | ||
| NSTS7111 | 신규 및 오리지널 | ||
| NSTULM709W | 신규 및 오리지널 | ||
| NSTV-3221C | 신규 및 오리지널 | ||
| NSTV-3221CN | 신규 및 오리지널 | ||
| NSTV2101 | 신규 및 오리지널 | ||
| NSTB60 | 신규 및 오리지널 | ||
| NSTLW222M350V51X118P | 신규 및 오리지널 |