PartNumber | NTD24N06LT4G | NTD24N06L-1 | NTD24N06LT4 |
Description | MOSFET 24V 60A POWER MOSFET | MOSFET 24V 60A N-Channel | |
Manufacturer | ON Semiconductor | ONS | ON Semiconductor |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 24 A | - | - |
Rds On Drain Source Resistance | 45 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 5 V | - | - |
Qg Gate Charge | 16 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 62.5 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 2.38 mm | - | - |
Length | 6.73 mm | - | - |
Series | NTD24N06L | - | NTD24N06L |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Type | MOSFET | - | - |
Width | 6.22 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 19 S | - | - |
Fall Time | 52 ns | - | 52 ns |
Product Type | MOSFET | - | - |
Rise Time | 97 ns | - | 97 ns |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 23 ns | - | 23 ns |
Typical Turn On Delay Time | 9.4 ns | - | 9.4 ns |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | DPAK |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 1.36W |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 1140pF @ 25V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 24A (Ta) |
Rds On Max Id Vgs | - | - | 45 mOhm @ 10A, 5V |
Vgs th Max Id | - | - | 2V @ 250μA |
Gate Charge Qg Vgs | - | - | 32nC @ 5V |
Pd Power Dissipation | - | - | 62.5 W |
Vgs Gate Source Voltage | - | - | 15 V |
Id Continuous Drain Current | - | - | 24 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 36 mOhms |
Forward Transconductance Min | - | - | 19 S |