NTD4806N

NTD4806N-35G vs NTD4806N-1G vs NTD4806NA-1G

 
PartNumberNTD4806N-35GNTD4806N-1GNTD4806NA-1G
DescriptionMOSFET NFET 30V 76A 6MOHMMOSFET N-CH 30V 11A IPAKMOSFET N-CH 30V 11A IPAK
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance6 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2.14 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height6.22 mm--
Length6.73 mm--
SeriesNTD4806N--
Transistor Type1 N-Channel--
TypeFETs - MOSFETs--
Width2.38 mm--
BrandON Semiconductor--
Forward Transconductance Min14 S--
Fall Time7.8 ns, 4.7 ns--
Product TypeMOSFET--
Rise Time29.7 ns, 23.8 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18.3 ns, 26 ns--
Typical Turn On Delay Time13.9 ns, 8.5 ns--
Unit Weight0.139332 oz--
제조사 부분 # 설명 RFQ
ON Semiconductor
ON Semiconductor
NTD4806N-35G MOSFET NFET 30V 76A 6MOHM
NTD4806NA-35G MOSFET NFET IPAK 30V 76A 6mOhm
NTD4806N-1G MOSFET N-CH 30V 11A IPAK
NTD4806NA-1G MOSFET N-CH 30V 11A IPAK
NTD4806NA-35G MOSFET N-CH 30V 11A IPAK
NTD4806NAT4G MOSFET N-CH 30V 11A DPAK
NTD4806NT4G MOSFET N-CH 30V 11.3A DPAK
NTD4806N-35G IGBT Transistors MOSFET NFET 30V 76A 6MOHM
NTD4806N 신규 및 오리지널
NTD4806NG 신규 및 오리지널
NTD4806NT1G 신규 및 오리지널
NTD4806NT4G 4806NG 신규 및 오리지널
NTD4806NT4GDPAK 신규 및 오리지널
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