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NTE27

NTE270 vs NTE2716 vs NTE272

 
PartNumberNTE270NTE2716NTE272
DescriptionTransistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:100V, Transition Frequency ft:-, Power Dissipation Pd:125W, DC Collector Current:10A, DC Current Gain hFE:1000hFE, No. of Pins:3Pins, EPROM UV 16K-bit 2K x 8 350ns 24-Pin DIPTransistor: NPN, bipolar, Darlington, 40V, 2A, 10W, TO202N
제조사 부분 # 설명 RFQ
NTE270 Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:100V, Transition Frequency ft:-, Power Dissipation Pd:125W, DC Collector Current:10A, DC Current Gain hFE:1000hFE, No. of Pins:3Pins,
NTE2716 EPROM UV 16K-bit 2K x 8 350ns 24-Pin DIP
NTE2732A EPROM UV 32K-bit 4K x 8 200ns 24-Pin PDIP
NTE274 TRANSISTOR, NPN, 80V, 8A, TO-66, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:80V, Transition Frequency ft:-, Power Dissipation Pd:50W, DC Collector Current:8A, DC Current Gain hF
NTE278 RF TRANSISTOR, NPN, 20V, 1.2GHZ, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:20V, Transition Frequency ft:1.2GHz, Power Dissipation Pd:2.5W, DC Collector Current:400mA, DC Curren
NTE272 Transistor: NPN, bipolar, Darlington, 40V, 2A, 10W, TO202N
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