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| PartNumber | NTHC5513T1G | NTHC5513T1 |
| Description | MOSFET 20V +3.9A/-3A Complementary | MOSFET 20V +3.9A/-3A |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | N |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | ChipFET-8 | ChipFET-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 3.9 A | 3.9 A |
| Rds On Drain Source Resistance | 80 mOhms, 155 mOhms | 80 mOhms, 155 mOhms |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.1 W | 1.1 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.05 mm | 1.05 mm |
| Length | 3.05 mm | 3.05 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal |
| Series | NTHC5513 | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
| Type | MOSFET | MOSFET |
| Width | 1.65 mm | 1.65 mm |
| Brand | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 6 S | 6 S |
| Fall Time | 3 ns, 27 ns | 3 ns, 27 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns, 13 ns | 9 ns, 13 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10 ns, 33 ns | 10 ns, 33 ns |
| Typical Turn On Delay Time | 5 ns, 7 ns | 5 ns, 7 ns |
| Unit Weight | 0.002998 oz | 0.002998 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor |
NTHC5513T1G | MOSFET 20V +3.9A/-3A Complementary | |
| NTHC5513T1 | MOSFET 20V +3.9A/-3A | ||
| NTHC5513T1 | MOSFET N/P-CH 20V CHIPFET | ||
| NTHC5513T1G | MOSFET N/P-CH 20V 1206A | ||
| NTHC5513T1/C1X | 신규 및 오리지널 | ||
| NTHC5513T1G , FLZ20VC | 신규 및 오리지널 | ||
| NTHC5513T1G-CUT TAPE | 신규 및 오리지널 |