NTMFS5C62 stock, NTMFS5C62, NTMFS5C628NLT1G


PartNumber	NTMFS5C628NLT1G	NTMFS5C628NLT3G	NTMFS5C628NLT
Description	MOSFET TRENCH 6 60V NFET	MOSFET TRENCH 6 60V NFET
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET	Transistors - FETs, MOSFETs - Single
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	DFN-5	SO-FL-8	-
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds Drain Source Breakdown Voltage	60 V	-	-
Id Continuous Drain Current	150 A	-	-
Rds On Drain Source Resistance	2.4 mOhms	-	-
Vgs th Gate Source Threshold Voltage	1.2 V	-	-
Vgs Gate Source Voltage	10 V	-	-
Qg Gate Charge	52 nC	-	-
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 175 C	-	+ 175 C
Pd Power Dissipation	110 W	-	-
Configuration	Single	-	Single
Channel Mode	Enhancement	-	Enhancement
Packaging	Reel	Reel	Reel
Transistor Type	1 N-Channel	-	1 N-Channel
Brand	ON Semiconductor	ON Semiconductor	-
Forward Transconductance Min	110 S	-	-
Fall Time	70 ns	-	70 ns
Product Type	MOSFET	MOSFET	-
Rise Time	150 ns	-	150 ns
Factory Pack Quantity	1500	5000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	28 ns	-	28 ns
Typical Turn On Delay Time	15 ns	-	15 ns
Unit Weight	0.003781 oz	-	-
Series	-	NTMFS5C628NL	-
Package Case	-	-	DFN-5
Pd Power Dissipation	-	-	110 W
Vgs Gate Source Voltage	-	-	+/- 20 V
Id Continuous Drain Current	-	-	150 A
Vds Drain Source Breakdown Voltage	-	-	60 V
Vgs th Gate Source Threshold Voltage	-	-	1.2 V
Rds On Drain Source Resistance	-	-	3.3 mOhms
Qg Gate Charge	-	-	52 nC

Search Part Number : "NTMFS5C62", Match & Start with "NTMFS5C62" - Total : 5

제조사	부분 #	설명
	NTMFS5C628NLT1G	MOSFET TRENCH 6 60V NFET
	NTMFS5C628NLT3G	MOSFET TRENCH 6 60V NFET
	NTMFS5C628NLT	신규 및 오리지널
ON Semiconductor	NTMFS5C628NLT1G	MOSFET N-CH 60V SO8FL
ON Semiconductor	NTMFS5C628NLT3G	Trans MOSFET N-CH 60V 28A 5-Pin(4+Tab) DFN EP T/R

NTMFS5C62