NTMFS6H80

NTMFS6H800NT1G vs NTMFS6H801NT1G vs NTMFS6H800N

 
PartNumberNTMFS6H800NT1GNTMFS6H801NT1GNTMFS6H800N
DescriptionMOSFET TRENCH 8 80V NFET POWER MOSFETMOSFET TRENCH 8 80V NFET POWER MOSFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8FLSO-8FL-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current203 A157 A-
Rds On Drain Source Resistance1.8 mOhms2.3 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge85 nC64 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation200 W166 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min138 S128 S-
Fall Time85 ns19 ns-
Product TypeMOSFETMOSFET-
Rise Time89 ns74 ns-
Factory Pack Quantity15001500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time97 ns70 ns-
Typical Turn On Delay Time25 ns25 ns-
제조사 부분 # 설명 RFQ
NTMFS6H800NT1G MOSFET TRENCH 8 80V NFET POWER MOSFET
NTMFS6H801NT1G MOSFET TRENCH 8 80V NFET POWER MOSFET
NTMFS6H800N 신규 및 오리지널
ON Semiconductor
ON Semiconductor
NTMFS6H800NT1G TRENCH 8 80V NFET
NTMFS6H801NT1G TRENCH 8 80V NFET
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