 | | |
| PartNumber | NTMS10P02R2G | NTMS10P02R2 |
| Description | MOSFET 20V 10A P-Channel | MOSFET 20V 10A P-Channel |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | N |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOIC-8 | SOIC-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 8.8 A | 10 A |
| Rds On Drain Source Resistance | 20 mOhms | 14 mOhms |
| Vgs th Gate Source Threshold Voltage | 600 mV | - |
| Vgs Gate Source Voltage | 2.5 V | 12 V |
| Qg Gate Charge | 48 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.5 mm | 1.5 mm |
| Length | 5 mm | 5 mm |
| Series | NTMS10P02 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Type | MOSFET | MOSFET |
| Width | 4 mm | 4 mm |
| Brand | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 30 S | 30 S |
| Fall Time | 110 ns, 125 ns | 125 ns, 110 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 40 ns, 100 ns | 100 ns, 40 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns, 110 ns | 100 ns, 110 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns |
| Unit Weight | 0.006596 oz | 0.006596 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor |
NTMS10P02R2G | MOSFET 20V 10A P-Channel | |
| NTMS10P02R2 | MOSFET 20V 10A P-Channel | ||
| NTMS10P02R2 | MOSFET P-CH 20V 8.8A 8-SOIC | ||
| NTMS10P02R2G | MOSFET P-CH 20V 8.8A 8-SOIC | ||
| NTMS10P02 | 신규 및 오리지널 | ||
| NTMS10P02R | 신규 및 오리지널 | ||
| NTMS10P02R2SG | 신규 및 오리지널 | ||
| NTMS10P02R2G-CUT TAPE | 신규 및 오리지널 |