NTR210

NTR2101PT1G vs NTR2101PT1

 
PartNumberNTR2101PT1GNTR2101PT1
DescriptionMOSFET -8V 3.7A P-ChannelMOSFET -8V 3.7A P-Channel
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYN
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage8 V8 V
Id Continuous Drain Current3.7 A3.7 A
Rds On Drain Source Resistance120 mOhms79 mOhms
Vgs th Gate Source Threshold Voltage400 mV-
Vgs Gate Source Voltage1.8 V8 V
Qg Gate Charge12 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation960 mW960 mW
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height0.94 mm0.94 mm
Length2.9 mm2.9 mm
ProductMOSFET Small SignalMOSFET Small Signal
SeriesNTR2101P-
Transistor Type1 P-Channel1 P-Channel
TypeMOSFETMOSFET
Width1.3 mm1.3 mm
BrandON SemiconductorON Semiconductor
Forward Transconductance Min9 S9 S
Fall Time31 ns15.75 ns
Product TypeMOSFETMOSFET
Rise Time15.75 ns15.75 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time38 ns38 ns
Typical Turn On Delay Time7.4 ns7.4 ns
Unit Weight0.000282 oz0.000282 oz
제조사 부분 # 설명 RFQ
ON Semiconductor
ON Semiconductor
NTR2101PT1G MOSFET -8V 3.7A P-Channel
NTR2101PT1 MOSFET -8V 3.7A P-Channel
NTR2101PT1G 신규 및 오리지널
NTR2101PT1 MOSFET P-CH 8V 3.7A SOT-23
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NTR2101P1G 신규 및 오리지널
NTR2101PT1G A18E 신규 및 오리지널
NTR2101PT1G A19T 신규 및 오리지널
NTR2101PT1G N011 신규 및 오리지널
NTR2101PT1G S1 신규 및 오리지널
NTR2101PT1G(TR7) 신규 및 오리지널
NTR2101PT1G. PFET SOT23 8V 3.7A 52MOHM ROHS COMPLIANT: YES
NTR2101PT1G//SI2305ADS-T 신규 및 오리지널
NTR2101PT3G 신규 및 오리지널
NTR210PT1G 신규 및 오리지널
NTR2101PT1G-CUT TAPE 신규 및 오리지널
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