 |  | | |
| PartNumber | NTZD3152PT1G | NTZD3152P | NTZD3152PT1 |
| Description | MOSFET -20V -430mA Dual P-Channel | ||
| Manufacturer | ON Semiconductor | - | ON Semiconductor |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 430 mA | - | - |
| Rds On Drain Source Resistance | 2 Ohms, 2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 1.8 V | - | - |
| Qg Gate Charge | 1.7 nC, 1.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 280 mW | - | - |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTZD3152P | - | NTZD3152P |
| Transistor Type | 2 P-Channel | - | 2 P-Channel |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 1 S, 1 S | - | - |
| Fall Time | 19 ns, 19 ns | - | 12 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns, 12 ns | - | 12 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns, 35 ns | - | 35 ns |
| Typical Turn On Delay Time | 10 ns, 10 ns | - | 10 ns |
| Unit Weight | 0.000106 oz | - | 0.000289 oz |
| Package Case | - | - | SOT-563, SOT-666 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-563 |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 250mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 175pF @ 16V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 430mA |
| Rds On Max Id Vgs | - | - | 900 mOhm @ 430mA, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 2.5nC @ 4.5V |
| Pd Power Dissipation | - | - | 250 mW |
| Vgs Gate Source Voltage | - | - | 6 V |
| Id Continuous Drain Current | - | - | - 430 mA |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 1 Ohms |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| NTZD3152PT1G | MOSFET -20V -430mA Dual P-Channel | ||
| NTZD3152PT1H | MOSFET PFET SOT563 20V 430MA TR | ||
| NTZD3152P | 신규 및 오리지널 | ||
| NTZD3152PT1 | 신규 및 오리지널 | ||
| NTZD3152PT1G-CUT TAPE | 신규 및 오리지널 | ||
ON Semiconductor |
NTZD3152PT1G | MOSFET 2P-CH 20V 0.43A SOT-563 | |
| NTZD3152PT1H | MOSFET 2P-CH 20V 0.43A SOT563 | ||
| NTZD3152PT5G | MOSFET 2P-CH 20V 0.43A SOT-563 |