 | |  | |
| PartNumber | NVD5C460NLT4G | NVD5C460NT4G | NVD5C464N |
| Description | MOSFET T6 40V DPAK EXP | MOSFET T6 40V DPAK EXP | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DPAK-3 | DPAK-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 73 A | 70 A | - |
| Rds On Drain Source Resistance | 4.6 mOhms | 4.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 36 nC | 26 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 47 W | 47 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 76 S | 62 S | - |
| Fall Time | 6 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | 27 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 29 ns | 21 ns | - |
| Typical Turn On Delay Time | 9 ns | 11 ns | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| NVD5C460NLT4G | MOSFET T6 40V DPAK EXP | ||
| NVD5C464NLT4G | MOSFET T6 40V DPAK EXP | ||
| NVD5C464N | 신규 및 오리지널 | ||
ON Semiconductor |
NVD5C464NT4G | MOSFET T6 40V SL DPAK | |
| NVD5C460NT4G | MOSFET T6 40V DPAK EXP | ||
| NVD5C464NT4G | MOSFET N-CHANNEL 40V 59A DPAK | ||
| NVD5C460NLT4G | Power MOSFET | ||
| NVD5C460NT4G | Power MOSFET | ||
| NVD5C464NLT4G | T6 40V DPAK EXPANSION AND |