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| PartNumber | NX3008PBK,215 | NX3008PBKMB,315 | NX3008PBKS,115 |
| Description | MOSFET 30V 230 MA P-CH TRENCH MOSFET | MOSFET P-Chan -30V -300mA | IGBT Transistors MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET |
| Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | DFN-1006B-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 230 mA | 300 mA | - |
| Rds On Drain Source Resistance | 4.1 Ohms | 4.1 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | 8 V | - |
| Qg Gate Charge | 0.55 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 420 mW | 715 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Transistor Type | 1 P-Channel Trench MOSFET | 1 P-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 38 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 65 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Unit Weight | 0.000882 oz | 0.000021 oz | - |
| Series | - | - | Automotive, AEC-Q101, TrenchMOS |
| Package Case | - | - | 6-TSSOP, SC-88, SOT-363 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 6-TSSOP |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 445mW |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 46pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 200mA |
| Rds On Max Id Vgs | - | - | 4.1 Ohm @ 200mA, 4.5V |
| Vgs th Max Id | - | - | 1.1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 0.75nC @ 4.5V |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
NX3008PBK,215 | MOSFET 30V 230 MA P-CH TRENCH MOSFET | |
| NX3008PBKW,115 | MOSFET 30V 200 MA P-CH TRENCH MOSFET | ||
| NX3008PBKV,115 | MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET | ||
| NX3008PBKMB,315 | MOSFET P-Chan -30V -300mA | ||
| NX3008PBKVL | MOSFET NX3008PBK/SOT23/TO-236AB | ||
| NX3008PBK,215 | MOSFET P-CH 30V TO-236AB | ||
| NX3008PBKMB,315 | MOSFET P-CH 30V 300MA 3DFN | ||
| NX3008PBKV,115 | MOSFET 2P-CH 30V 0.22A SOT666 | ||
| NX3008PBKW,115 | MOSFET P-CH 30V SOT323 | ||
| NX3008PBKS,115 | IGBT Transistors MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET | ||
| NX3008PBKT115 | Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| NX3008PBK | Small Signal Field-Effect Transisto | ||
| NX3008PBK/DG/B2215 | - Bulk (Alt: NX3008PBK/DG/B2215) | ||
| NX3008PBK215 | Now Nexperia NX3008PBK - Small Signal Field-Effect Transistor, 0.23A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| NX3008PBKM | 신규 및 오리지널 | ||
| NX3008PBKMB | 신규 및 오리지널 | ||
| NX3008PBKMB315 | Now Nexperia NX3008PBKMB - Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| NX3008PBKS | 신규 및 오리지널 | ||
| NX3008PBKS115 | 신규 및 오리지널 | ||
| NX3008PBKS15 | 신규 및 오리지널 | ||
| NX3008PBKT | 신규 및 오리지널 | ||
| NX3008PBKV | 신규 및 오리지널 | ||
| NX3008PBKW | 신규 및 오리지널 | ||
| NX3008PBKW 115 | 신규 및 오리지널 | ||
| NX3008PBKW115 | Now Nexperia NX3008PBKW - Small Signal Field-Effect Transisto | ||
| NX3008PBKXB | 신규 및 오리지널 | ||
| NX3008PBKS,115-CUT TAPE | 신규 및 오리지널 | ||
NXP Semiconductors |
NX3008PBKT,115 | IGBT Transistors MOSFET 30V 200 MA P-CH TRENCH MOSFET |