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| PartNumber | PBSS4580PA,115 | PBSS4580PA | PBSS4580PA,115-CUT TAPE |
| Description | Bipolar Transistors - BJT 80V 5.6A NPN LOW VCESAT TRANSISTOR | SmallSignalBipolarTransistor,0.7AI(C),40VV(BR)CEO,1-Element,NPN,Silicon,TO-236AB | |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 7 A | - | - |
| Gain Bandwidth Product fT | 155 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 425 | - | - |
| Height | 0.61 mm | - | - |
| Length | 2.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.1 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | 5.6 A | - | - |
| DC Collector/Base Gain hfe Min | 45 | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
PBSS4580PA,115 | Bipolar Transistors - BJT 80V 5.6A NPN LOW VCESAT TRANSISTOR | |
| PBSS4580PA,115 | Bipolar Transistors - BJT 80V 5.6A NPN LOW VCESAT TRANSISTOR | ||
| PBSS4580PA | SmallSignalBipolarTransistor,0.7AI(C),40VV(BR)CEO,1-Element,NPN,Silicon,TO-236AB | ||
| PBSS4580PA115 | Now Nexperia PBSS4580PA - Small Signal Bipolar Transistor, HUSON3 | ||
| PBSS4580PA,115-CUT TAPE | 신규 및 오리지널 |