 | | |
| PartNumber | PDTA115EMB,315 | PDTA115EM,315 |
| Description | Bipolar Transistors - Pre-Biased PNP Resistor Equipped Transistor | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Package / Case | DFN-1006-3 | DFN-1006-3 |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 10000 | 10000 |
| Subcategory | Transistors | Transistors |
| Configuration | - | Single |
| Transistor Polarity | - | PNP |
| Typical Input Resistor | - | 100 kOhms |
| Typical Resistor Ratio | - | 1 |
| Mounting Style | - | SMD/SMT |
| Collector Emitter Voltage VCEO Max | - | 50 V |
| Continuous Collector Current | - | 20 mA |
| Peak DC Collector Current | - | 20 mA |
| Minimum Operating Temperature | - | - 65 C |
| Maximum Operating Temperature | - | + 150 C |
| DC Current Gain hFE Max | - | 80 |
| Height | - | 0.47 mm |
| Length | - | 1.02 mm |
| Width | - | 0.62 mm |
| Part # Aliases | - | PDTA115EM T/R |
| Unit Weight | - | 0.000031 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
PDTA115EMB,315 | Bipolar Transistors - Pre-Biased PNP Resistor Equipped Transistor | |
| PDTA115EM,315 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTA115EMB,315 | TRANS PREBIAS PNP 250MW 3DFN | ||
| PDTA115EM,315 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTA115EM315 | Now Nexperia PDTA115EM - Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, XQFN3 | ||
| PDTA115EMB315 | Now Nexperia PDTA115EMB - Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, XQFN3 |