PHB66

PHB66NQ03LT,118 vs PHB66NQ03 vs PHB66NQ03LT

 
PartNumberPHB66NQ03LT,118PHB66NQ03PHB66NQ03LT
DescriptionMOSFET TAPE13 MOSFET
ManufacturerNexperia-PHILIPS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current66 A--
Rds On Drain Source Resistance10.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation93 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time90 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time15 ns--
Part # Aliases/T3 PHB66NQ03LT--
제조사 부분 # 설명 RFQ
Nexperia
Nexperia
PHB66NQ03LT,118 MOSFET TAPE13 MOSFET
PHB66NQ03LT,118 RF Bipolar Transistors MOSFET TAPE13 MOSFET
PHB66NQ03 신규 및 오리지널
PHB66NQ03LT 신규 및 오리지널
PHB66NQ03LT118 Now Nexperia PHB66NQ03LT Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
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