PHT

PHT6NQ10T,135 vs PHT6NQ10T.135 vs PHT6NQ10T135

 
PartNumberPHT6NQ10T,135PHT6NQ10T.135PHT6NQ10T135
DescriptionMOSFET TAPE13 PWR-MOSTrans MOSFET N-CH 100V 3A 4-Pin(3+Tab) SOT-223 T/R (Alt: PHT6NQ10T,135)Now Nexperia PHT6NQ10T - Power Field-Effect Transistor, 3A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance90 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.7 mm--
Length6.7 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel--
Width3.7 mm--
BrandNexperia--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time6 ns--
Part # Aliases/T3 PHT6NQ10T--
Unit Weight0.008818 oz--
  • 시작
  • PHT 263
제조사 부분 # 설명 RFQ
Nexperia
Nexperia
PHT6NQ10T,135 MOSFET TAPE13 PWR-MOS
PHT6NQ10T,135 MOSFET N-CH 100V 3A SOT223
PHT6NQ10T.135 Trans MOSFET N-CH 100V 3A 4-Pin(3+Tab) SOT-223 T/R (Alt: PHT6NQ10T,135)
PHT6NQ10T135 Now Nexperia PHT6NQ10T - Power Field-Effect Transistor, 3A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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