PMBF170,2

PMBF170,235 vs PMBF170,215 vs PMBF170,215-CUT TAPE

 
PartNumberPMBF170,235PMBF170,215PMBF170,215-CUT TAPE
DescriptionMOSFET N-channel TrenchMOS intermed level FETTrans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current300 mA--
Rds On Drain Source Resistance2.8 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation830 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type1 N-Channel--
BrandNexperia--
Forward Transconductance Min100 mS--
Product TypeMOSFET--
Factory Pack Quantity10000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time3 ns--
Unit Weight0.000282 oz--
Series-TrenchMOS-
Package Case-TO-236-3, SC-59, SOT-23-3-
Operating Temperature--65°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23 (TO-236AB)-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-830mW-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-40pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-300mA (Ta)-
Rds On Max Id Vgs-5 Ohm @ 500mA, 10V-
Vgs th Max Id-2V @ 1mA-
Gate Charge Qg Vgs---
제조사 부분 # 설명 RFQ
Nexperia
Nexperia
PMBF170,235 MOSFET N-channel TrenchMOS intermed level FET
PMBF170,215 Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R
PMBF170,235 MOSFET N-CH 60V 0.3A SOT-23
PMBF170,215-CUT TAPE 신규 및 오리지널
Top