PMBT

PMBTA06,215 vs PMBT6428,215 vs PMBT6429,215

 
PartNumberPMBTA06,215PMBT6428,215PMBT6429,215
DescriptionBipolar Transistors - BJT NPN GP 500MA 80VBipolar Transistors - BJT TRANS SW TAPE-7Bipolar Transistors - BJT TRANS SW TAPE-7
ManufacturerNexperiaNexperiaNexperia
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3SOT-23-3
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max80 V50 V45 V
Collector Base Voltage VCBO80 V60 V55 V
Emitter Base Voltage VEBO4 V6 V6 V
Maximum DC Collector Current0.5 A100 mA0.1 A
Gain Bandwidth Product fT100 MHz700 MHz700 MHz
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Height1 mm1 mm1 mm
Length3 mm3 mm3 mm
PackagingReelReelReel
Width1.4 mm1.4 mm1.4 mm
BrandNexperiaNexperiaNexperia
Pd Power Dissipation250 mW250 mW250 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity300030003000
SubcategoryTransistorsTransistorsTransistors
Part # AliasesPMBTA06 T/RPMBT6428 T/RPMBT6429 T/R
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Collector Emitter Saturation Voltage-600 mV-
DC Current Gain hFE Max-250 at 100 uA, 5 V500 at 100 uA, 5 V
DC Collector/Base Gain hfe Min-250 at 100 uA, 5 V, 250 at 1 mA, 5 V, 250 at 10 mA, 5 V500 at 100 uA, 5 V, 500 at 1 mA, 5 V, 500 at 10 mA, 5 V
제조사 부분 # 설명 RFQ
Nexperia
Nexperia
PMBTA06,215 Bipolar Transistors - BJT NPN GP 500MA 80V
PMBTA06,235 Bipolar Transistors - BJT TRANS SW TAPE-11
PMBT6428,215 Bipolar Transistors - BJT TRANS SW TAPE-7
PMBT6429,215 Bipolar Transistors - BJT TRANS SW TAPE-7
PMBTA13,215 Darlington Transistors TRNS DARLINGTN TAPE7
PMBTA13,215 Darlington Transistors TRNS DARLINGTN TAPE7
PMBT6428,215 TRANS NPN 50V 0.1A SOT23
PMBT6429,215 Bipolar Transistors - BJT TRANS SW TAPE-7
PMBTA06,215 TRANS NPN 80V 0.5A TO236AB
PMBTA06,235 TRANS NPN 80V 0.5A TO236AB
PMBT5551215 Now Nexperia PMBT5551 - Small Signal Bipolar Transistor, 0.3A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PMBT591A 신규 및 오리지널
PMBT6428215 Now Nexperia PMBT6428 - Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PMBT6429215 Now Nexperia PMBT6429 - Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PMBT8050 신규 및 오리지널
PMBT8050 , HMC434TR 신규 및 오리지널
PMBT8550/W04 신규 및 오리지널
PMBT8550C 신규 및 오리지널
PMBT9012 신규 및 오리지널
PMBT9012D 신규 및 오리지널
PMBT9013 신규 및 오리지널
PMBT9013C 신규 및 오리지널
PMBT9013D 신규 및 오리지널
PMBT9014 신규 및 오리지널
PMBT9014D 신규 및 오리지널
PMBT9015 신규 및 오리지널
PMBT9015 , HMC481MP86ETR 신규 및 오리지널
PMBTA06 1GM 신규 및 오리지널
PMBTA06 , MAX6377UR29 신규 및 오리지널
PMBTA06 TR 신규 및 오리지널
PMBTA06,215NEXPERIA 신규 및 오리지널
PMBTA06.215 Trans GP BJT NPN 80V 0.5A 3-Pin TO-236AB T/R (Alt: PMBTA06,215)
PMBTA06/DG , HMC574MS8ET 신규 및 오리지널
PMBTA06/DG,215 신규 및 오리지널
PMBTA06215 Now Nexperia PMBTA06 - Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PMBTA06235 Now Nexperia PMBTA06 - Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PMBTA06T/R(P1G) 신규 및 오리지널
PMBT6428 T/R Bipolar Transistors - BJT TRANS SW TAPE-7
PMBT6429 215 Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:45V, Transition Frequency ft:700MHz, Power Dissipation Pd:250mW, DC Collector Current:100mA, DC Current Gain hFE:500hFE, No. of Pins:3
PMBTA06,215-CUT TAPE 신규 및 오리지널
PMBTA06DG 신규 및 오리지널
PMBT6428 신규 및 오리지널
PMBT6429 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PMBT8550 신규 및 오리지널
PMBT9014C 신규 및 오리지널
PMBTA06/DG 신규 및 오리지널
PMBTA13 Bipolar Junction Transistor, Darlington, NPN Type, SOT-23
PMBTA06 Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 80 V, 250 mW, 500 mA, 100 , RoHS Compliant: Yes
PMBTA06/6215 - Bulk (Alt: PMBTA06/6215)
PMBTA06/DG/B3235 - Bulk (Alt: PMBTA06/DG/B3235)
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