 |  | | |
| PartNumber | PSMN057-200B,118 | PSMN057-200P,127 | PSMN050-80BS,118 |
| Description | MOSFET TAPE13 MOSFET | MOSFET TRENCH-200 | MOSFET N-CH 80 V 46 MOHM MOSFET |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | TO-263-3 | TO-220-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 73 V |
| Id Continuous Drain Current | 39 A | 39 A | 22 A |
| Rds On Drain Source Resistance | 57 mOhms | 57 mOhms | 46 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 5.2 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 250 W | 250 W | 56 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | Reel |
| Height | 4.5 mm | 9.4 mm | - |
| Length | 10.3 mm | 10.3 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.4 mm | 4.7 mm | - |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 78 ns | 78 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 58 ns | 58 ns | - |
| Factory Pack Quantity | 800 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 105 ns | 105 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | /T3 PSMN057-200B | PSMN057-200P | - |
| Unit Weight | - | 0.211644 oz | 0.139332 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
PSMN0R7-25YLDX | MOSFET PSMN0R7-25YLD/4 LEADS/REEL 7 | |
| PSMN059-150Y,115 | MOSFET Trans MOSFET N-CH 40V 75A 5-Pin | ||
| PSMN075-100MSEX | MOSFET PSMN075-100MSE/MLFPAK/REEL 7 | ||
| PSMN069-100YS,115 | MOSFET Single NChannel 100V 68A 56W 130mOhms | ||
| PSMN063-150D,118 | MOSFET TAPE13 PWR-MOS | ||
| PSMN057-200B,118 | MOSFET TAPE13 MOSFET | ||
| PSMN057-200P,127 | MOSFET TRENCH-200 | ||
| PSMN050-80BS,118 | MOSFET N-CH 80 V 46 MOHM MOSFET | ||
| PSMN063-150D,118 | MOSFET N-CH 150V 29A DPAK | ||
| PSMN0R7-25YLDX | MOSFET N-CH 25V LFPAK56 | ||
| PSMN075-100MSEX | IGBT Transistors MOSFET PSMN075-100MSE/MLFPAK/REEL7 | ||
| PSMN057-200B,118 | MOSFET TAPE13 MOSFET | ||
| PSMN070-200B,118 | MOSFET TAPE13 PWR-MOS | ||
| PSMN070-200P,127 | MOSFET RAIL PWR-MOS | ||
| PSMN085-150K,518 | RF Bipolar Transistors MOSFET TAPE13 MOSFET | ||
| PSMN050-80BS,118 | RF Bipolar Transistors MOSFET N-CH 80 V 46 MOHM MOSFET | ||
| PSMN059-150Y,115 | MOSFET N-CH 150V 43A LFPAK | ||
| PSMN057-200P,127 | MOSFET N-CH 200V 39A TO220AB | ||
| PSMN069-100YS,115 | MOSFET N-CH LFPAK | ||
| PSMN050-80BS118 | - Bulk (Alt: PSMN050-80BS118) | ||
| PSMN050-80PS | MOSFET, N CH, 80V, 22A, TO-220 | ||
| PSMN051-100P | 신규 및 오리지널 | ||
| PSMN057-200B | 신규 및 오리지널 | ||
| PSMN057-200P | MOSFET TRENCH-200 | ||
| PSMN057-200P127 | Now Nexperia PSMN057-200P - Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P | ||
| PSMN063-150D | 신규 및 오리지널 | ||
| PSMN063-150D+118 | - Bulk (Alt: PSMN063-150D118) | ||
| PSMN063-150D,118 I | 신규 및 오리지널 | ||
| PSMN063-150D-T3 | 신규 및 오리지널 | ||
| PSMN063-150D118 | - Bulk (Alt: PSMN063-150D118) | ||
| PSMN0631500 | 신규 및 오리지널 | ||
| PSMN070-200B/T3 | 신규 및 오리지널 | ||
| PSMN070-200B118 | Now Nexperia PSMN070-200B - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| PSMN070-200B_15 | 신규 및 오리지널 | ||
| PSMN070-200P | - Bulk (Alt: PSMN070-200P) | ||
| PSMN070-200P/B | 신규 및 오리지널 | ||
| PSMN070-200P127 | Now Nexperia PSMN070-200P - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P | ||
| PSMN075 110P | 신규 및 오리지널 | ||
| PSMN085-150K518 | Now Nexperia PSMN085-150K - Power Field-Effect Transistor, 3.5A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | ||
| PSMN0R7-25YLD | 신규 및 오리지널 | ||
| PSMN0R9-25YLC | 신규 및 오리지널 | ||
| PSMN059-150Y,115-CUT TAPE | 신규 및 오리지널 | ||
| PSMN063-150D,118-CUT TAPE | 신규 및 오리지널 | ||
| PSMN069-100YS,115-CUT TAPE | 신규 및 오리지널 | ||
| PSMN075-100MSEX-CUT TAPE | 신규 및 오리지널 | ||
NXP Semiconductors |
PSMN050-80PS,127 | MOSFET N-CH 80V 22A TO220AB | |
| PSMN069-100YS | MOSFET,N CHANNEL,100V,17A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:17A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0566ohm, Rds(on) Test Voltage Vgs:10V, Thr | ||
| PSMN085-150K | 신규 및 오리지널 | ||
| PSMN059-150Y | 신규 및 오리지널 | ||
| PSMN070-200B | 신규 및 오리지널 |