 | |  | |
| PartNumber | PSMN008-75B,118 | PSMN009-100B,118 | PSMN006-20K,518 |
| Description | MOSFET TAPE13 PWR-MOS | MOSFET TAPE13 PWR-MOS | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 75 V | 100 V | - |
| Id Continuous Drain Current | 75 A | 75 A | - |
| Rds On Drain Source Resistance | 8.5 mOhms | 8.8 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 230 W | 230 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 4.5 mm | 4.5 mm | - |
| Length | 10.3 mm | 10.3 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.4 mm | 9.4 mm | - |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 80 ns | 43 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 55 ns | 59 ns | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 88 ns | 120 ns | - |
| Typical Turn On Delay Time | 18 ns | 38 ns | - |
| Part # Aliases | /T3 PSMN008-75B | /T3 PSMN009-100B | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
PSMN009-100P,127 | MOSFET RAIL PWR-MOS | |
| PSMN008-75B,118 | MOSFET TAPE13 PWR-MOS | ||
| PSMN009-100B,118 | MOSFET TAPE13 PWR-MOS | ||
| PSMN009-100B,118 | IGBT Transistors MOSFET TAPE13 PWR-MOS | ||
| PSMN009-100P,127 | MOSFET RAIL PWR-MOS | ||
| PSMN006-20K,518 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| PSMN008-75B,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
NXP Semiconductors |
PSMN008-75P,127 | MOSFET N-CH 75V 75A TO220AB | |
| PSMN009-100W,127 | MOSFET N-CH 100V 100A SOT429 | ||
| PSMN005-75P. | 신규 및 오리지널 | ||
| PSMN00575P | MOSFET, N, TO-220 | ||
| PSMN006 | 신규 및 오리지널 | ||
| PSMN006-20 | 신규 및 오리지널 | ||
| PSMN006-20K | 신규 및 오리지널 | ||
| PSMN006-20K518 | 신규 및 오리지널 | ||
| PSMN008 | 신규 및 오리지널 | ||
| PSMN008-75B | 신규 및 오리지널 | ||
| PSMN008-75P | MOSFET RAIL PWR-MOS | ||
| PSMN009 | 신규 및 오리지널 | ||
| PSMN009-100 | 신규 및 오리지널 | ||
| PSMN009-100B | 신규 및 오리지널 | ||
| PSMN009-100B /T3 | 신규 및 오리지널 | ||
| PSMN009-100B118 | Now Nexperia PSMN009-100B - Power Field-Effect Transistor, 75A I(D), 100V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PSMN009-100P | MOSFET RAIL PWR-MOS | ||
| PSMN009-100P. | 신규 및 오리지널 | ||
| PSMN009-100P127 | Now Nexperia PSMN009-100P - Power Field-Effect Transistor, 75A I(D), 100V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P | ||
| PSMN009-100W | MOSFET RAIL PWR-MOS | ||
| PSMN009100P | 신규 및 오리지널 | ||
| PSMN009100W | 신규 및 오리지널 | ||
| PSMN006-20K.518 | Transistor: N-MOSFET, unipolar, 20V, 32A, 8.3W, SO8 |