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| PartNumber | PSMN2R5-60PLQ | PSMN2R5-30YL,115 |
| Description | MOSFET N-Channel MOSFET | MOSFET <=30V N CH TRENCHFET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | LFPAK56-5 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V |
| Id Continuous Drain Current | 150 A | 100 A |
| Rds On Drain Source Resistance | 5.6 mOhms | 2.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.45 V | - |
| Qg Gate Charge | 223 nC | - |
| Pd Power Dissipation | 349 W | 88 W |
| Configuration | Single | Single |
| Packaging | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Fall Time | 128 ns | 25 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 119 ns | 62 ns |
| Factory Pack Quantity | 50 | 1500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 224 ns | 61 ns |
| Typical Turn On Delay Time | 71 ns | 39 ns |
| Unit Weight | 0.211644 oz | 0.002892 oz |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Channel Mode | - | Enhancement |
| Height | - | 1.1 mm |
| Length | - | 5 mm |
| Width | - | 4.1 mm |
| Part # Aliases | - | PSMN2R5-30YL T/R |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
PSMN2R5-60PLQ | MOSFET N-Channel MOSFET | |
| PSMN2R5-30YL,115 | MOSFET <=30V N CH TRENCHFET | ||
| PSMN2R5-60PLQ | MOSFET N-Channel MOSFET | ||
| PSMN2R5-30YL,115 | MOSFET N-CH 30V 100A LFPAK | ||
| PSMN2R5-60PL127 | - Bulk (Alt: PSMN2R5-60PL127) | ||
| PSMN2R5-30YL | 신규 및 오리지널 |