PSMN2R7-30P

PSMN2R7-30PL,127 vs PSMN2R7-30PL vs PSMN2R7-30PL127

 
PartNumberPSMN2R7-30PL,127PSMN2R7-30PLPSMN2R7-30PL127
DescriptionMOSFET N-CHAN 30V 100AMOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0023ohm, Rds(on) Test Voltage Vgs:10V, Now Nexperia PSMN2R7-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.7 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation170 W--
ConfigurationSingle--
PackagingTube--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
제조사 부분 # 설명 RFQ
Nexperia
Nexperia
PSMN2R7-30PL,127 MOSFET N-CHAN 30V 100A
PSMN2R7-30PL,127 MOSFET N-CH 30V TO220AB
PSMN2R7-30PL MOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0023ohm, Rds(on) Test Voltage Vgs:10V,
PSMN2R7-30PL127 Now Nexperia PSMN2R7-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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