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| PartNumber | PSMN4R3-80ES,127 | PSMN4R3-80ES | PSMN4R3-80ES127 |
| Description | MOSFET N-Ch 80V 4.3 mOhms | Now Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | I2PAK-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 4.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 104 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 306 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.084199 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R3-80ES,127 | MOSFET N-Ch 80V 4.3 mOhms | |
| PSMN4R3-80ES,127 | MOSFET N-Ch 80V 4.3 mOhms | ||
| PSMN4R3-80ES | 신규 및 오리지널 | ||
| PSMN4R3-80ES127 | Now Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |