PSMN5R0-100P

PSMN5R0-100PS,127 vs PSMN5R0-100PS vs PSMN5R0-100PS127

 
PartNumberPSMN5R0-100PS,127PSMN5R0-100PSPSMN5R0-100PS127
DescriptionMOSFET N-Ch 100V 5 mOhmsNow Nexperia PSMN5R0-100PS - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current110 A--
Rds On Drain Source Resistance5 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge170 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation338 W--
ConfigurationSingle--
PackagingTube--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
제조사 부분 # 설명 RFQ
Nexperia
Nexperia
PSMN5R0-100PS,127 MOSFET N-Ch 100V 5 mOhms
PSMN5R0-100PS,127 MOSFET N-CH 100V 120A TO220AB
PSMN5R0-100PS 신규 및 오리지널
PSMN5R0-100PS127 Now Nexperia PSMN5R0-100PS - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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