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| PartNumber | PSMN5R5-60YS,115 | PSMN5R5-60YS | PSMN5R5-60YS 115 |
| Description | MOSFET N-CHANNEL 60V STD LEVEL MOSFET | POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 60V, 0.055OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-235 | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | LFPAK56-5 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 8.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4.6 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 56 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 130 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | N-Channel LFPAK 60 V 5.2 mOhms Standard Level FET | - | - |
| Width | 4.1 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 44 ns | - | - |
| Typical Turn On Delay Time | 23 ns | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
PSMN5R5-60YS,115 | MOSFET N-CHANNEL 60V STD LEVEL MOSFET | |
| PSMN5R5-60YS,115 | MOSFET N-CH 60V 100A LFPAK | ||
| PSMN5R5-60YS | POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 60V, 0.055OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-235 | ||
| PSMN5R5-60YS 115 | 신규 및 오리지널 | ||
| PSMN5R5-60YS,115-CUT TAPE | 신규 및 오리지널 |