 |  |  | |
| PartNumber | PTFA211801F V4 R250 | PTFA211801F V4 | PTFA211801F |
| Description | RF MOSFET Transistors Hi Pwr RF LDMOS FET 180 W 2110-2170 MHz | IC FET RF LDMOS 180W H-37260-2 | |
| Manufacturer | Infineon | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 1.3 A | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Rds On Drain Source Resistance | 50 mOhms | - | - |
| Gain | 17.5 dB | - | - |
| Output Power | 180 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | H-34288-4/2 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Height | 4.11 mm | - | - |
| Length | 23.11 mm | - | - |
| Operating Frequency | 2170 MHz | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 13.72 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Channel Mode | Enhancement | - | - |
| Pd Power Dissipation | 56.5 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Part # Aliases | FA211801FV4R25XT | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
PTFA211801F V4 R250 | RF MOSFET Transistors Hi Pwr RF LDMOS FET 180 W 2110-2170 MHz | |
Infineon Technologies |
PTFA211801F V4 | IC FET RF LDMOS 180W H-37260-2 | |
| PTFA211801F V4 R250 | IC FET RF LDMOS 180W H-37260-2 | ||
| PTFA211801F | 신규 및 오리지널 |